Incorporating Dispersive Readout in SiMOS Architectures

Mr Anderson West
4pm Thursday 29 June 2017
CQC2T Conference Room, Level 2, Newton Building J12, UNSW Kensington Campus

Silicon Metal Oxide (SiMOS) based architectures are an excellent platform for single electron spin qubit systems. SiMOS systems possess long coherence times1, allow high fidelity control of electron spins1, and enable a two-qubit logic gate1. Current technology features spin control via electron spin resonance (ESR) and sensing is achieved via an on chip single electron transistor enabling single-shot reservoir spin readout. However, extending the SiMOS platform to a larger number of qubits will require an alternative readout mechanism. I will present my work towards in situ sensing with gate based dispersive readout at radio frequencies. Additionally the benefits of adoption of this sensing scheme in the pursuit of a linear logical qubit array are discussed.

1)M. Veldhorst, et al. 2014. An addressable quantum dot qubit with fault-tolerant control-fidelity. Nature Nanotechnology 9, 981–985