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Photographic & Data Competition Winners
Congratulations to the winners of the photo and data competition. Your prize will be an $800 Apple voucher to spend at an Apple Store on a number of products you'd prefer, including an iPad 2 and an iPhone 4S. The winners will be contacted regarding their prize collection and recognition will be made during the Centre Workshop.
Thank you to all those who participated in the competition with images and data. We will compile a display of these for the Centre Workshop and will also be adding these to the website in the next couple of months.
Photography Image Winner - Matthew Broome
Quantum Computing with Light: This photo depicts the essential tools for a modern quantum optics laboratory: Lasers, beam splitters, fiber optics and of course the experimenter!
Honourable Mention - Nai Shyan Lai
Research fellows in CQC2T cleanrooms (left and right) and data showing characteristics of silicon double quantum dots (centre).
Honourable Mention - Ben Buchler
Hot Gas: Our gas-phase temperature quantum memory is based on sauna-temperature rubidium vapour. Optical quantum states are stored by absorption into the warm gas and then controllably released as a photon echo. In the foreground, a rubidium vapour cell glows purple when illuminated with 300mW of infrared laser light.
Data Image Winner - Rose Ahlefeldt
A rotation pattern in a europium chloride crystal showing the hyperfine splitting of the ground state as a magnetic field is rotated in a spiral around the sample, one of the preparatory experiments for doing quantum computing demonstrations in this material.
Honourable Mention - Bent Weber
Perspective into an atomic-scale world: Three-dimensional false-colour visualization of 1.5nm wide silicon wire, patterned by STM hydrogen-resist lithography. The areas in blue show the hydrogen resist monolayer whereas yellow regions show where hydrogen atoms have been removed selectively with the STM tip. An atomic-resolution close-up of the wire shows its width of only two silicon dimer rows (4 Si atoms). Exposing the wire with the phosphorus precursor phosphine followed by annealing creates a metallically-doped ultra-scaled interconnect in silicon whose resistivity has been shown to be independent of width down to the atomic-scale. Resistivity values are as low as those of doped silicon bulk material.
Honourable Mention - Jan Mol
The silicon surface in energy and space: The figure shows scanning tunneling spectroscopy data of Si(100) taken at 4K. In addition to the valence and conduction band we can clearly map out the bonding and anti-bonding surface states, as well as the back-bonding states, both in energy and spatial position.